Kinetic Studies in GeO₂/Ge System: A Retrospective from 2021 investigates reaction kinetics in GeO₂/Ge systems, aiming to demonstrate the fundamentals of the GeO₂/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.

This book first reviews the development of MOS technology and discusses the potentials of emerging Ge and the challenges facing it as a contentious channel material, once promising to replace Si (silicon) for advanced nodes. The study systematically analyzes the following aspects of GeO₂/Ge stacks that will shed light on the characteristics and reaction principles of the system: GeO₂/Ge degradation, Ge passivation techniques, desorption kinetics of GeO from GeO₂/Ge, the relationship between GeO₂ crystallization and GeO₂/Ge interface reaction, and the oxidation kinetics of Ge. Based on findings from the intrinsic properties of GeO₂/Ge, the author also compares it with prevalent SiO₂/Si systems and demonstrates the essential differences between the two, contributing to quality control, process optimization, and technology advancements of GeO₂/Ge.

The book will be a useful reference for researchers, professionals, and students interested in electronic materials, condenser matter physics, microelectronic engineering, and semiconductors.