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3D Integration of Resistive Switching Memory de Qing Luo

3D Integration of Resistive Switching Memory: Frontiers in Semiconductor Technology

Editat de Qing Luo
en Limba Engleză Paperback – 19 dec 2024
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications.
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  Taylor & Francis Ltd (Sales) – 19 dec 2024 16459 lei  3-5 săpt. +548 lei  4-10 zile
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  CRC Press – 13 apr 2023 46319 lei  6-8 săpt.

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Specificații

ISBN-13: 9781032489506
ISBN-10: 1032489502
Pagini: 98
Dimensiuni: 140 x 216 x 6 mm
Greutate: 0.13 kg
Editura: Taylor & Francis Ltd (Sales)
Seria Frontiers in Semiconductor Technology

Cuprins

1. Introduction
Qing Luo
2.Associative Problems in Crossbar array and 3D architectures
Qing Luo
3. Selector Devices and Self-selective cells
Yaxin Ding, Qing Luo
4. Integration of 3D RRAM
Qing Luo
5. Reliability issues of the 3D Vertical RRAM
Tiancheng Gong, Dengyun Lei
6. Applications of 3D RRAM Beyond Storage
Xumeng Zhang, Xiaoxin Xu, Jianguo Yang
7. Conclusion
Qing Luo

Notă biografică

Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.