GaN and SiC Power Devices
Autor Maurizio Di Paolo Emilioen Limba Engleză Paperback – 2 feb 2025
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Specificații
ISBN-13: 9783031506567
ISBN-10: 3031506561
Pagini: 280
Dimensiuni: 168 x 240 x 16 mm
Greutate: 0.48 kg
Editura: Springer Nature Switzerland
ISBN-10: 3031506561
Pagini: 280
Dimensiuni: 168 x 240 x 16 mm
Greutate: 0.48 kg
Editura: Springer Nature Switzerland
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Cuprins
Introduction.- Wide bandgap Semiconductors.- GaN overview.- SiC overview.- Electrical Characteristics.- Circuit Design with GaN and SiC.- Electric Vehicles.- Renewable Energies.- Motor Drivers.- Thermal Management.- Power Supplies.- Lidar and Space Applications.
Notă biografică
Maurizio Di Paolo Emilio is Editor in Chief of Power Electronics News and EEWeb, and an EE Times correspondent. He holds a Ph.D in physics and is a telecommunications engineer. He has worked on projects concerning gravitational waves research, designing a thermal compensation system (TCS) and data acquisition and control systems, and on others about x-ray microbeams in collaboration with Columbia University and motor control for space with INFN. TCS was applied to the Virgo and LIGO experiments, which detected gravitational waves for the first time and earned the Nobel Prize in 2017.
Textul de pe ultima copertă
This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.
Caracteristici
Provides a single-source reference on power circuit design with wide bandgap semiconductors Covers both theoretical and practical aspects of circuit design with GaN and SiC devices Explains principles of GaN and SiC semiconductors, manufacturing, characterization, design and market for key applications