Cantitate/Preț
Produs
Total produse
Vezi coșul
Electrical and Optoelectronic Properties of the Nanodevices Composed of Two-Dimensional Materials: Graphene and Molybdenum (IV) Disulfide de Cheng-Hua Liu

Electrical and Optoelectronic Properties of the Nanodevices Composed of Two-Dimensional Materials: Graphene and Molybdenum (IV) Disulfide: Springer Theses

Autor Cheng-Hua Liu
en Limba Engleză Paperback – feb 2019
This thesis focuses on the transport and magneto-transport properties of graphene p-n-p junctions, such as the pronounced quantum Hall effect, a well-defined plateau–plateau transition point, and scaling behavior. In addition, it demonstrates persistent photoconductivity (PPC) in the monolayer MoS2 devices, an effect that can be attributed to random localized potential fluctuations in the devices.
Further, it studies scaling behavior at zeroth Landau level and high performance of fractional values of quantum Hall plateaus in these graphene p-n-p devices. Moreover, it demonstrates a unique and efficient means of controlling the PPC effect in monolayer MoS2. This PPC effect may offer novel functionalities for MoS2-based optoelectronic applications in the future.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (1) 60594 lei  6-8 săpt.
  Springer Nature Singapore – feb 2019 60594 lei  6-8 săpt.
Hardback (1) 61174 lei  6-8 săpt.
  Springer Nature Singapore – 5 sep 2018 61174 lei  6-8 săpt.

Din seria Springer Theses

Preț: 60594 lei

Preț vechi: 71286 lei
-15% Nou

Puncte Express: 909
Preț estimativ în valută:
10721€ • 12509$ • 9373£

Carte tipărită la comandă

Livrare economică 16-30 ianuarie 26

 Adaugă în coș

Wish list
Gift list
Am citit!
Adaugă în listă
Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9789811346170
ISBN-10: 9811346178
Pagini: 90
Ilustrații: XIII, 74 p. 49 illus., 42 illus. in color.
Dimensiuni: 155 x 235 x 5 mm
Greutate: 0.14 kg
Ediția:Softcover reprint of the original 1st ed. 2018
Editura: Springer Nature Singapore
Colecția Springer
Seria Springer Theses

Locul publicării:Singapore, Singapore

Cuprins

Introduction.- Theoretical background.- Experimental methods.- Distinctive magnetotransport of graphene p-n-p junctions via resist-free fabrication and controlled diffusion of metallic contact.- Observation of quantum Hall plateau-plateau transition and scaling behavior of the zeroth Landau level in graphene p-n-p junction.- Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect.- Conclusion.

Notă biografică

Cheng-Hua Liu graduated from National Taiwan University with a major in Physics. He obtained his Ph.D. in May 2016. His research projects involve investigations on the graphene p-n-p junction and the MoS2 thin-film transistor using the resistor-free fabrication method. His main project is based in Prof. Chi-Te Liang’s lab at National Taiwan University and Wei-Hua Wang’s lab at the Institute of Atomic and Molecular Sciences.

Textul de pe ultima copertă

This thesis focuses on the transport and magneto-transport properties of graphene p-n-p junctions, such as the pronounced quantum Hall effect, a well-defined plateau–plateau transition point, and scaling behavior. In addition, it demonstrates persistent photoconductivity (PPC) in the monolayer MoS2 devices, an effect that can be attributed to random localized potential fluctuations in the devices.
Further, it studies scaling behavior at zeroth Landau level and high performance of fractional values of quantum Hall plateaus in these graphene p-n-p devices. Moreover, it demonstrates a unique and efficient means of controlling the PPC effect in monolayer MoS2. This PPC effect may offer novel functionalities for MoS2-based optoelectronic applications in the future.

Caracteristici

Nominated as an outstanding thesis by National Taiwan University Presents the observation of a plateau–plateau transition point corresponding to zeroth Landau level Demonstrates a unique and efficient means of controlling the PPC (persistent photoconductivity) effect in monolayer MoS2 Introduces the fabrication of transistors using the resistor-free and one-step methods