Cryogenic Operation of Silicon Power Devices: Power Electronics and Power Systems
Autor Ranbir Singh, B. Jayant Baligaen Limba Engleză Paperback – 11 oct 2012
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| Paperback (1) | 609.85 lei 6-8 săpt. | |
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| Hardback (1) | 615.66 lei 6-8 săpt. | |
| Springer Us – 31 mai 1998 | 615.66 lei 6-8 săpt. |
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Specificații
ISBN-13: 9781461376354
ISBN-10: 1461376351
Pagini: 172
Ilustrații: XVIII, 148 p.
Dimensiuni: 155 x 235 x 9 mm
Greutate: 0.25 kg
Ediția:Softcover reprint of the original 1st ed. 1998
Editura: Springer Us
Colecția Springer
Seria Power Electronics and Power Systems
Locul publicării:New York, NY, United States
ISBN-10: 1461376351
Pagini: 172
Ilustrații: XVIII, 148 p.
Dimensiuni: 155 x 235 x 9 mm
Greutate: 0.25 kg
Ediția:Softcover reprint of the original 1st ed. 1998
Editura: Springer Us
Colecția Springer
Seria Power Electronics and Power Systems
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
1. Introduction.- 1.1 Advent of Power Cryoelectronics.- 1.2 Cryogenic Power Applications.- 1.3 Advantages of using semiconductor devices at low temperatures.- 1.4 Inferences and Objectives.- 2. Temperature Dependence of Silicon Properties.- 2.1 Semiconductor statistics and carrier Freezeout.- 2.2 Energy bandgap of Silicon.- 2.3 Intrinsic Carrier Concentration.- 2.4 Carrier Mobility.- 2.5 Carrier Lifetime.- 2.6 Breakdown Phenomenon.- 3. Schottky Barrier Diodes.- 3.1 Device Operation.- 3.2 Experimental Results.- 3.3 Optimization of Schottky Barrier Diodes for low temperature operation.- 3.4 Conclusions.- 4. P-I-N Diode.- 4.1 Basic Structure.- 4.2 Experimental Results.- 4.3 Analytical Modeling.- 4.4 Conclusions.- 5. Power Bipolar Transistors.- 5.1 Basic Operation.- 5.2 Experimental Results.- 5.3 Emitter Current Crowding.- 5.4 Transistor Optimization.- 5.5 Conclusions.- 6. Power Mosfets.- 6.1 Device Operation.- 6.2 Carrier freezeout in silicon.- 6.3 Experimental Results.- 6.4 Discussion.- 6.5 Conclusion.- 7. Insulated Gate Bipolar Transistors.- 7.1 Device operation.- 7.2 Experimental results.- 7.3 Conclusion.- 8. Power Junction Field Effect Transistors.- 8.1 Basic Operation.- 8.2 Forward Blocking.- 8.3 Forward Conduction.- 8.4 Conclusions.- 9. Asymmetric Field Controlled Thyristors.- 9.1 Basic Operation.- 9.2 Static Characteristics.- 9.3 Switching Characteristics.- 9.4 Trade-Off curve and Conclusions.- 10. Thyristors.- 10.1 Basic Operation.- 10.2 Static Characteristics.- 10.3 Switching Characteristics.- 10.4 Conclusions.- 11. Synopsis.- 11.1 Design considerations for power devices at 77K.- 11.2 Performance of power devices at 77K.- 11.3 Power devices for cryogenic applications.- References.