The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications
Autor Manijeh Razeghien Limba Engleză Hardback – 1995
Coverage begins with an introduction to III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques, with the differential reflectivity treatment applied to lattice matched and mis-matched conditions. The author gives an in-depth treatment of the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with an up-to-date discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
The MOCVD Challenge is an invaluable introduction and guide for researchers in materials science, applied physics, and electrical engineering, who study the properties and applications of compound (III-V) semiconductor materials.
Professor Manijeh Razeghi is director of the Center for Quantum Devices at Northwestern University and leads an internationally renowned research team exploring the use of the MOCVD growth technique. Formerly head of research at Thomson-CSF in France, she was awarded the IBM Europe Science and Technology Prize for her early research into MOCVD.
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Specificații
ISBN-13: 9780750303095
ISBN-10: 0750303093
Pagini: 444
Dimensiuni: 156 x 234 x 25 mm
Greutate: 0.82 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
ISBN-10: 0750303093
Pagini: 444
Dimensiuni: 156 x 234 x 25 mm
Greutate: 0.82 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Public țintă
ProfessionalCuprins
Preface. Foreword. Introduction. Introduction to semiconductor compounds. MOCVD growth technique. ^IIn-situ characterization during MOCVD. ^IEx-situ characterization techniques. MOCVD growth of GaAs layers. Growth and characterization of the GaInP-GaAs system. Optical devices. GaAs-based lasers. GaAs-based heterojunction electron devices grown by MOCVD. Optoelectronic integrated circuits (OEICs). Appendices. Effect of substrate miscut on the measured superlattice period. Optimization of thickness and In composition of InGaAs well for 980 nm lasers. Energy levels and laser gains in a quantum well (GaInAsP): the 'effective mass approximation'. Luttinger-Kohn Hamiltonian. Infrared detectors. Index.
Descriere
This second volume focuses on MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Coverage begins with III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques and the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with a discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
Notă biografică
Manijeh Razeghi is with the Center of Quantum Devices at Northwestern University.
Recenzii
… a comprehensive review of GaInAsP-InP and GaInAsP-GaAs materials, III-V semiconductor compounds used for photonic and electronic device applications. This second edition represents the combined updated versions of the MOCVD Challenge. The author addresses a variety of relevant topics, including: growth technology, in situ characterization during MOCVD, ex situ characterization techniques, growth of GaAs layers, growth and characterization of the GaInP-GaAs system, optical devices, GaAs-based layers, optoelectronic integrated circuits, and optoelectronic devices on quantum structures.
—SciTech Book News, February 2011
—SciTech Book News, February 2011