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Technology CAD - Computer Simulation of IC Processes and Devices de Robert W. Dutton

Technology CAD - Computer Simulation of IC Processes and Devices: The Springer International Series in Engineering and Computer Science, cartea 243

Autor Robert W. Dutton, Zhiping Yu
en Limba Engleză Paperback – 8 oct 2012
129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium .......... . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects ..... . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction ............. . 197 5.2 The MOS Capacitor ........ . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ... 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model ...
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Specificații

ISBN-13: 9781461364085
ISBN-10: 1461364086
Pagini: 396
Ilustrații: XVII, 373 p.
Dimensiuni: 155 x 235 x 22 mm
Greutate: 0.6 kg
Ediția:Softcover reprint of the original 1st ed. 1993
Editura: Springer
Colecția The Springer International Series in Engineering and Computer Science
Seria The Springer International Series in Engineering and Computer Science

Locul publicării:New York, NY, United States

Public țintă

Research

Cuprins

1 Technology-Oriented CAD.- 1.1 Introduction.- 1.2 Process and Device CAD.- 1.3 Process Simulation Techniques.- 1.4 Interfaces in Process and Device CAD.- 1.5 CMOS Technology.- 1.6 Summary.- 1.7 Exercises.- 1.8 References.- 2 Introduction to SUPREM.- 2.1 Introduction.- 2.2 Ion Implantation.- 2.3 Oxidation.- 2.4 Impurity Diffusion.- 2.5 Summary.- 2.6 Exercises.- 2.7 References.- 3 Device CAD.- 3.1 Introduction.- 3.2 Semiconductor Device Analysis.- 3.3 Field-Effect Structures.- 3.4 Bipolar Junction Structures.- 3.5 Summary.- 3.6 Exercises.- 3.7 References.- 4 PN Junctions.- 4.1 Introduction.- 4.2 Carrier Densities: Equilibrium Case.- 4.3 Non-Equilibrium.- 4.4 Carrier Transport and Conservation.- 4.5 The pn Junction — Equilibrium Conditions.- 4.6 The pn Junction — Non-equilibrium.- 4.7 SEDAN Analysis.- 4.8 Summary.- 4.9 Exercises.- 4.10 References.- 5 MOS Structures.- 5.1 Introduction.- 5.2 The MOS Capacitor.- 5.3 Basic MOSFET I-V Characteristics.- 5.4 Threshold Voltage in Nonuniform Substrate.- 5.5 MOS Device Design by Simulation.- 5.6 Summary.- 5.7 Exer cises.- 5.8 References.- 6 Bipolar Transistors.- 6.1 Introduction.- 6.2 Lateral pnp Transistor Operation.- 6.3 Transport Current Analysis.- 6.4 Generalized Charge Storage Model.- 6.5 Transistor Equivalent Circuits.- 6.6 Second Order Effects.- 6.7 Transit Time and Cutoff Frequency.- 6.8 Application of Simulation Tools.- 6.9 Summary.- 6.10 Exercises.- 6.11 References.- 7 BiCMOS Technology.- 7.1 Introduction.- 7.2 Triple-Diffused BiCMOS.- 7.3 Buried-Epitaxial Layer BiCMOS.- 7.4 Summary.- 7.5 Exercises.- 7.6 References.- A Numerical Analyis.- B BiCMOS Technology Overview.- C Templates for PISCES Simulation.