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Reliability Wearout Mechanisms in Advanced CMOS Technologies

Autor AW Strong
en Limba Engleză Hardback – 4 sep 2009
A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: * Introduction to Reliability * Gate Dielectric Reliability * Negative Bias Temperature Instability * Hot Carrier Injection * Electromigration Reliability * Stress Voiding Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.
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Specificații

ISBN-13: 9780471731726
ISBN-10: 0471731722
Pagini: 640
Dimensiuni: 156 x 234 x 35 mm
Greutate: 0.98 kg
Editura: Wiley
Locul publicării:Hoboken, United States

Public țintă

Advanced undergraduate and graduate students, professionals and design engineers

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Descriere

This invaluable resource tells the complete story of failure mechanisms from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience.