Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates: NATO Science Series E:, cartea 298
Editat de K. Eberl, Pierre M. Petroff, Piet Demeesteren Limba Engleză Hardback – 31 aug 1995
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Specificații
ISBN-13: 9780792336792
ISBN-10: 0792336798
Pagini: 386
Ilustrații: XI, 386 p.
Dimensiuni: 155 x 235 x 24 mm
Greutate: 0.74 kg
Ediția:1995
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series E:
Locul publicării:Dordrecht, Netherlands
ISBN-10: 0792336798
Pagini: 386
Ilustrații: XI, 386 p.
Dimensiuni: 155 x 235 x 24 mm
Greutate: 0.74 kg
Ediția:1995
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series E:
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
Theoretical Aspects of Epitaxial Growth.- Submonolayer template formation for epitaxial processes.- Role of stress in the self-assembly of nanostructures.- Self Assembling Nanostructures / Cluster Formation.- Semiconductor nanostructures: Nature’s way.- Nucleation and growth of InAs islands on GaAs: An optical study.- Growth and properties of self assembling quantum dots in III/V compound semiconductors.- Self-assembling InP/In0.48Ga0.52P quantum dots grown by MBE.- Group III–V and group IV quantum dot synthesis.- Growth on Tilted and Non-(001) Surfaces.- Epitaxy on high-index surfaces: A key to self-organizing quantum wires and dots.- Binding of electrons and holes at quantum wires formed by T-intersecting quantum wells.- Between one and two dimensions: Quantum wires arrays grown on vicinal surfaces.- The characterization of the growth of sub-monolayer coverages of Si and Be on GaAs (001)-c(4×4) & (2×4)-? by reflectance anisotropy spectroscopy and RHEED.- Laterally ordered incorporation of impurity atoms on vicinal GaAs (001) surfaces.- The role of exchange reactions and strain in the heteroepitaxy on vicinal GaAs surfaces.- Nanostructure Growth on Patterned Silicon Substrates.- Formation and properties of SiGe/Si quantum wire structures.- Self-assembling growth of silicon nanostructures with micro shadow masks.- Radiative recombination in SiGe/Si dots and wires selectively grown by LPCVD.- Evolution of Si surface nanostructure under growth conditions.- Nanostructures Prepared by Selective Epitaxy or Regrowth on Patterned Substrates.- Fabrication of quantum wires and dots and nanostructure characterization.- The chemistry and growth of MOVPE-based selective epitaxy.- Photoassisted selective area growth of III–V compounds.- Concepts for lateral III–Vheterostructures fabricated by surface selective growth in MOMBE.- Molecular processes for surface selective growth on patterned substrates; an investigation of CBE AlAs deposition.- Basic growth studies and applications of quantum structures grown on submicron gratings.- Pyramidal quantum dot structures fabricated using selective area MOCVD.- Selective epitaxy for ridge and edge quantum wire structures: Morphology and purity issues.- Simulation of molecular beam epitaxial growth over nonplanar surfaces.- Seeded self-ordering of low-dimensional quantum structures by nonplanar epitaxy.- Structural investigations of the direct growth of AlGaAs/GaAs quantum wire structures by MOVPE.- Growth induced and patterned 0-dimensional quantum structures.- In-Situ Processing and Device Applications Based on Epitaxial Regrowth.- Growth of low dimensional structures for optical application.- Operation of strained multi-quantum wire lasers.- MBE-regrowth for monolithic integration of GaAs-based field-effect transistors and Schottky diodes.- Chemical beam etching and epitaxy with atomic scale control and instant switching between etching and epitaxy.- In-Situ etching and MBE regrowth for templated sidewall quantum wires.