Integrated Circuit Defect-Sensitivity: Theory and Computational Models: The Springer International Series in Engineering and Computer Science, cartea 208
Autor José Pineda de Gyvezen Limba Engleză Paperback – 23 feb 2014
| Toate formatele și edițiile | Preț | Express |
|---|---|---|
| Paperback (1) | 610.96 lei 6-8 săpt. | |
| Springer Us – 23 feb 2014 | 610.96 lei 6-8 săpt. | |
| Hardback (1) | 616.95 lei 6-8 săpt. | |
| Springer Us – 31 dec 1992 | 616.95 lei 6-8 săpt. |
Din seria The Springer International Series in Engineering and Computer Science
- 20%
Preț: 594.49 lei - 24%
Preț: 859.55 lei - 20%
Preț: 1847.13 lei - 20%
Preț: 1228.27 lei - 24%
Preț: 866.26 lei - 18%
Preț: 609.91 lei - 20%
Preț: 618.64 lei - 20%
Preț: 569.56 lei - 18%
Preț: 733.28 lei - 18%
Preț: 1177.92 lei - 18%
Preț: 927.56 lei - 20%
Preț: 621.14 lei - 18%
Preț: 911.94 lei - 20%
Preț: 621.64 lei - 15%
Preț: 612.85 lei - 20%
Preț: 618.96 lei - 18%
Preț: 912.40 lei - 20%
Preț: 619.58 lei - 20%
Preț: 950.07 lei - 20%
Preț: 621.01 lei - 18%
Preț: 910.11 lei - 20%
Preț: 956.89 lei - 18%
Preț: 919.85 lei - 20%
Preț: 620.07 lei - 15%
Preț: 617.89 lei - 18%
Preț: 913.32 lei - 18%
Preț: 1173.85 lei - 18%
Preț: 920.45 lei - 15%
Preț: 619.12 lei - 18%
Preț: 911.64 lei - 18%
Preț: 910.58 lei - 20%
Preț: 1234.64 lei
Preț: 610.96 lei
Preț vechi: 718.77 lei
-15% Nou
Puncte Express: 916
Preț estimativ în valută:
108.11€ • 126.94$ • 94.89£
108.11€ • 126.94$ • 94.89£
Carte tipărită la comandă
Livrare economică 27 ianuarie-10 februarie 26
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9781461363835
ISBN-10: 1461363837
Pagini: 196
Ilustrații: XXIV, 167 p. 48 illus.
Dimensiuni: 155 x 235 x 10 mm
Greutate: 0.28 kg
Ediția:Softcover reprint of the original 1st ed. 1993
Editura: Springer Us
Colecția Springer
Seria The Springer International Series in Engineering and Computer Science
Locul publicării:New York, NY, United States
ISBN-10: 1461363837
Pagini: 196
Ilustrații: XXIV, 167 p. 48 illus.
Dimensiuni: 155 x 235 x 10 mm
Greutate: 0.28 kg
Ediția:Softcover reprint of the original 1st ed. 1993
Editura: Springer Us
Colecția Springer
Seria The Springer International Series in Engineering and Computer Science
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
1 Introduction.- 1.1 Approaches to Yield Modeling.- 2 Defect Semantics and Yield Modeling.- 2.1 Microelectronics Technology.- 2.2 Modeling of Process Induced Defects and Faults.- 2.3 Statistical Characterization of Spot Defects.- 2.4 Brief Overview of Historical Yield Models.- 3 Computational Models for Defect-Sensitivity.- 3.1 Taxonomy of Defect—Sensitivity Models.- 3.2 Theoretical Foundation of Critical Areas.- 3.3 Susceptible Sites.- 3.4 Critical Regions and Critical Areas.- 3.5 Geometrical Proof of the Construction of Critical Regions..- 4 Single Defect Multiple Layer (SDML) Model.- 4.1 Critical Regions for Protrusion Defects.- 4.2 Critical Regions for Isolated Spot Defects.- 4.3 Critical Regions for Intrusion Defects.- 4.4 A CAD System for SDML Critical Areas.- 4.5 A “Spot-Defect” Language.- 4.6 Layout Partitioning.- 4.7 Extraction of Multi—Layer Susceptible Sites.- 4.8 Defect Mechanisms.- 4.9 Intrusion Defects.- 4.10 Isolated—Spot Defects.- 4.11 Protrusion Defects.- 4.12 Construction of Multi—Layer Critical Regions.- 4.13 Computation of Multi—Layer Critical Areas.- 4.14 Notes on Implementation.- 4.15 Examples.- 5 Fault Analysis and Multiple Layer Critical Areas.- 5.1 Failure Analysis and Yield Projection of 6T—RAM Cells.- 5.2 Fault Weighting.- 5.3 Analysis and Weighting of Defect Induced Faults.- 6 Single Defect Single Layer (SDSL) Model.- 6.1 Theory of Critical Regions for SDSL Models.- 6.2 Single—Layer Susceptible Sites.- 6.3 Critical Regions for Bridges.- 6.4 Critical Regions for Cuts.- 6.5 Computation of Critical Areas for SDSL Models.- 6.6 Extraction of SDSL Susceptible Sites.- 6.7 Computation of SDS Critical Areas.- 6.8 Complexity Analysis.- 6.9 Examples.- 7 IC Yield Prediction and Single Layer Critical Areas.- 7.1 Sensitivity Analysis.-7.9 Yield Analysis.- 8 Single vs. Multiple Layer Critical Areas.- 8.1 Uncovered Situations of the SDSL Model.- 8.2 Case Study.- 8.2.1 Comparative Results.- 8.3 Summary and Discussion.- References.- Appendix 1 Sources of Defect Mechanism.- Appendix 2 End Effects of Critical Regions.- Appendix 3 NMOS Technology File.