High-Speed Photodiodes in Standard CMOS Technology: The Springer International Series in Engineering and Computer Science, cartea 869
Autor Sasa Radovanovic, Anne-Johan Annema, Bram Nautaen Limba Engleză Hardback – 2 iun 2006
The problem of photodiodes in standard CMOS technology it that they have very limited bandwidth, allowing data rates up to only 50Mbit per second. High-speed Photodiodes in Standard CMOS Technology first analyzes the photodiode behaviour and compares existing solutions to enhance the speed. After this, the book introduces a new and robust electronic equalizer technique that makes data rates of 3Gb/s possible, without changing the manufacturing technology. The application of this technique can be found in short haul fibre communication, optical printed circuit boards, but also photodiodes for laser disks.
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| Springer Us – 2 iun 2006 | 615.66 lei 6-8 săpt. |
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Specificații
ISBN-13: 9780387285917
ISBN-10: 0387285911
Pagini: 160
Ilustrații: VIII, 160 p.
Dimensiuni: 155 x 235 x 11 mm
Greutate: 0.42 kg
Ediția:2006
Editura: Springer Us
Colecția Springer
Seria The Springer International Series in Engineering and Computer Science
Locul publicării:New York, NY, United States
ISBN-10: 0387285911
Pagini: 160
Ilustrații: VIII, 160 p.
Dimensiuni: 155 x 235 x 11 mm
Greutate: 0.42 kg
Ediția:2006
Editura: Springer Us
Colecția Springer
Seria The Springer International Series in Engineering and Computer Science
Locul publicării:New York, NY, United States
Public țintă
Professional/practitionerCuprins
Introduction. Outline. Short range optical interconnection. Why optical interconnection? Characteristics of light. Optical fiber types. High intensity light sources. Photodetectors introduction. High-speed optical receivers in CMOS for [small lambda] = 850 nm-literature overview. CMOS photodiodes for [small lambda] = 850 nm. Introduction. Bandwidth of photodiodes in CMOS. Intrinsic (physical) photodiode bandwidth. Extrinsic (electrical) photodiode bandwidth. Noise in photodiodes. Summary and conclusions. High data-rates with CMOS photodiodes. Introduction. Transimpedance amplifier design. Photodiode selection. Equalizer design. Robustness on spread and temperature. Experimental results. Conclusions. Bulk CMOS photodiodes for [small lambda]= 400 nm. Introduction. Finger nwell/p-substrate diode in adjoined-well technology. Finger n+/nwell/p-substrate diode. Finger n+/p-substrate photodiode in separate-well technology. Finger p+/nwell/p-substrate in adjoined-well technology. p+/nwell photodiode. Conclusion. Polysilicon photodiode. High-speed lateral polydiode. Noise in polysilicon photodiodes. Time domain measurements. Quantum efficiency and sensitivity. Conclusion. CMOS photodiodes: generalized. Introduction. Generalization of CMOS photodiodes. Device layer - photocurrent amplitude. Analog equalization. Summary and Conclusions. Conclusions. Conclusions.
Caracteristici
Describes state of the art in integrated photodiodes in CMOS technology Describes the fastest photo detector methodology Give a very good introduction in the subject of high speed photodiodes in CMOS Includes supplementary material: sn.pub/extras