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Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy: Springer Tracts in Modern Physics, cartea 156

Autor Nikolai N. Ledentsov
en Limba Engleză Hardback – 2 iul 1999
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
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Specificații

ISBN-13: 9783540657941
ISBN-10: 3540657940
Pagini: 108
Ilustrații: VIII, 86 p.
Dimensiuni: 156 x 234 x 12 mm
Greutate: 0.33 kg
Ediția:1999
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Tracts in Modern Physics

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

Basics of MBE growth.- Doping and impurity segregation effects in MBE.- Influence of strain in the epitaxial film on surface-phase equilibria.- II–VI materials.- Conclusion.

Textul de pe ultima copertă

The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

Caracteristici

Up-to-date overview Includes supplementary material: sn.pub/extras