Gettering Defects in Semiconductors
Autor Victor A. Perevostchikov, Vladimir D. Skoupov Traducere de Victor Gloumoven Limba Engleză Paperback – 21 oct 2010
– to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;
– to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;
– to fill a gap in the contemporary literature on the underlying semiconductor-material theory.
The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
| Toate formatele și edițiile | Preț | Express |
|---|---|---|
| Paperback (1) | 914.28 lei 6-8 săpt. | |
| Springer Berlin, Heidelberg – 21 oct 2010 | 914.28 lei 6-8 săpt. | |
| Hardback (1) | 918.59 lei 6-8 săpt. | |
| Springer Berlin, Heidelberg – 15 sep 2005 | 918.59 lei 6-8 săpt. |
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Specificații
ISBN-13: 9783642065705
ISBN-10: 3642065708
Pagini: 404
Ilustrații: XVI, 388 p. 70 illus.
Dimensiuni: 155 x 235 x 22 mm
Greutate: 0.61 kg
Ediția:Softcover reprint of hardcover 1st edition 2005
Editura: Springer Berlin, Heidelberg
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3642065708
Pagini: 404
Ilustrații: XVI, 388 p. 70 illus.
Dimensiuni: 155 x 235 x 22 mm
Greutate: 0.61 kg
Ediția:Softcover reprint of hardcover 1st edition 2005
Editura: Springer Berlin, Heidelberg
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
Basic technological processes and defect formation in the components of device structures.- Effects of defects on electrophysical and functional parameters in semiconducting structures and devices.- Techniques for high-temperature gettering.- Physical foundations for low-temperature gettering techniques.
Textul de pe ultima copertă
Gettering Defects in Semiconductors fulfills three basic purposes:
– to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;
– to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;
– to fill a gap in the contemporary literature on the underlying semiconductor-material theory.
The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
– to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;
– to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;
– to fill a gap in the contemporary literature on the underlying semiconductor-material theory.
The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Caracteristici
Only monograph describing the current state of the art Combines the standard techniques with the results of the author’s research