Ferroelectric Thin Films
Editat de Yoshihiro Ishibashi, Masanori Okuyamaen Limba Engleză Paperback – 19 oct 2010
| Toate formatele și edițiile | Preț | Express |
|---|---|---|
| Paperback (1) | 1168.86 lei 43-57 zile | |
| Springer Berlin, Heidelberg – 19 oct 2010 | 1168.86 lei 43-57 zile | |
| Hardback (1) | 1173.68 lei 43-57 zile | |
| Springer Berlin, Heidelberg – 22 feb 2005 | 1173.68 lei 43-57 zile |
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Specificații
ISBN-13: 9783642063305
ISBN-10: 3642063306
Pagini: 260
Ilustrații: XIII, 244 p.
Dimensiuni: 155 x 235 x 15 mm
Greutate: 0.4 kg
Ediția:Softcover reprint of hardcover 1st edition 2005
Editura: Springer Berlin, Heidelberg
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3642063306
Pagini: 260
Ilustrații: XIII, 244 p.
Dimensiuni: 155 x 235 x 15 mm
Greutate: 0.4 kg
Ediția:Softcover reprint of hardcover 1st edition 2005
Editura: Springer Berlin, Heidelberg
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films.- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films.- PB-Based Ferroelectric Thin Films Prepared by MOCVD.- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films.- Rhombohedral PZT Thin Films Prepared by Sputtering.- Scanning Nonlinear Dielectric Microscope.- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary.- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions.- Relaxor Behaviors in Perovskite-Type Dielectric Compounds.- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique.- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics.- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film.- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure.
Textul de pe ultima copertă
Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.
Caracteristici
Most advanced status report in this field of research on the market