Einstein Relation in Compound Semiconductors and Their Nanostructures: Springer Series in Materials Science, cartea 116

Basics of the Einstein Relation.- The Einstein Relation in Bulk Specimens of Compound Semiconductors.- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization.- The Einstein Relation in Compound Semiconductors Under Crossed Fields Configuration.- The Einstein Relation in Compound Semiconductors Under Size Quantization.- The Einstein Relation in Quantum Wires of Compound Semiconductors.- The Einstein Relation in Inversion Layers of Compound Semiconductors.- The Einstein Relation in Nipi Structures of Compound Semiconductors.- The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Fields.- The Einstein Relation in Compound Semiconductors in the Presence of Light Waves.- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization.- Conclusion and Future Research.

This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.

First book on the Einstein relation in compound semiconductors Covers the basic physics and applications to nanodevices, dispersion and various physical conditions Both a reference work for researchers and a study text for graduate students Includes supplementary material: sn.pub/extras

PROF. DR. ENG. KAMAKHYA PRASAD GHATAK author of another Springer book, "Electric Power in Nanostructured Materials under Strong Magnetic Field" to be published in 2010. All Indian Council for Technical Education selected his Research & Development project for the best project award in Electronics and second best research project award considering all the branches of Engineering for the year 2006. DR. SITANGSHU BHATTACHARYA obtained his M. Sc. and Ph.D Degree from Electronic Science of the University of Calcutta and Jadavpur University, India in 2003 and 2009 respectively and is presently working at the Centre for Electronics Design and Technology, Indian Institute of Science, Bangalore. His current work involves the investigations of transport properties of different nanoscaled materials and devices under various external conditions. He is the co-author of more than 40 scientific research papers in different aspects of nanostructures in international peer-reviewed journals of high repute. He is also the co-author of three aforementioned research monographs.His present research interests are the quantum effect devices and nonlinearities. Besides, he is an invited speaker in different reputed International Conferences on nanoscale systems and devices.