BSIM–SOI Industry-Standard Compact Model: Surface Potential-Based FET Model for RFIC Design provides complete coverage of compact modeling and design techniques specific to SOI transistors. The book is designed to be the first comprehensive guide that thoroughly explains the industry-standard BSIM-SOI compact model, along with the unique modeling and RF design techniques necessary for the accurate extraction and implementation of the industry standard BSIM-SOI model. This book will be a valuable reference for the expanding field of SOI technology, catering specifically to circuit designers, device engineers, academic researchers, and students.

This book will equip designers, engineers, and researchers with the knowledge and tools required to optimize SOI-based circuit performance and system integration. The book explains fundamental surface-potential calculations and addresses various real device effects, such as floating body, self-heating, dynamic depletion effects, and layout influences to accurately replicate realistic device behavior. Additionally, the step-by-step parameter extraction procedures for the BSIM-SOI model are outlined, and the results of benchmark tests are also presented.

• Serves as an invaluable and practical reference for comprehending the operational intricacies and underlying physics of SOI devices
• Comprehensively covers all facets of the BSIM-SOI model, offering insights directly from model developers themselves
• Offers detailed insights into, and solutions for, the challenges associated with extracting parameters from SOI devices due to factors such as conventional and gate-induced floating body effects, dynamic depletion effects, etc.
• Provides clear guidance (focusing primarily on the modeling process) on the measurement data needed to extract BSIM-SOI model parameters
• Discusses RF switch and power amplifier design, linking this to device parameters via physics-based simulation models