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Advanced High Voltage Power Device Concepts de B. Jayant Baliga

Advanced High Voltage Power Device Concepts

Autor B. Jayant Baliga
en Limba Engleză Hardback – 20 sep 2011
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.
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Specificații

ISBN-13: 9781461402688
ISBN-10: 1461402689
Pagini: 584
Ilustrații: XVI, 568 p.
Dimensiuni: 160 x 241 x 35 mm
Greutate: 0.98 kg
Ediția:2012
Editura: Springer
Locul publicării:New York, NY, United States

Public țintă

Research

Cuprins

1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.

Textul de pe ultima copertă

Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures.
This book provides readers with:
  • The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;
  •  Analytical formulations for all the device structures with validation performed using numerical simulations;
  • Analysis of potential silicon carbide structures that could compete with the silicon devices.
Advanced High Voltage Power Device Concepts is an ideal book for researchers, engineers, and educators interested in emerging technology for renewable energy generation and distribution.
This book provides readers with:
  • The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, andmotor-control markets;
  •  Analytical formulations for all the device structures with validation performed using numerical simulations;
  • Analysis of potential silicon carbide structures that could compete with the silicon devices.
Advanced High Voltage Power Device Concepts is an ideal book for researchers, engineers, and educators interested in emerging technology for renewable energy generation and distribution.

Notă biografică

Jayant Baliga is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. He joined NCSU in 1988 as a Full Professor and was promoted to the rank of 'Distinguished University Professor' in 1997. Among his many NCSU honors, he was the recepient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'; and the 2011 Alexander Quarles Holladay Medal of Excellence, the highest honor at NCSU from the Board of Trustees. Prof. Baliga has authored/edited 18 books and over 500 scientific articles. He has been granted 120 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor. Prof. Baliga invented, developed and commercialized the Insulated Gate Bipolar Trannsistor (IGBT) at GE. The IGBT is extensively used in the consumer, industrial, lighting, transportation, medical, renewable energy, and other sectors of the economy. It has enabled enormous reduction of gasoline and electrical energy use, resulting in huge cost savings to consumers, and reduction of world-wide carbon dioxide emissions. A detailed report on the applications and social impact of the IGBT is available. He received the National Medal of Technology and Innovation, the highest form of recognition given to an engineer by the United States Government, from President Obama in October2011, at the White House; and the North Carolina Award for Science from Governor Purdue in October 2012.