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Tunneling Field Effect Transistor Technology de Lining Zhang

Tunneling Field Effect Transistor Technology

Editat de Lining Zhang, Mansun Chan
en Limba Engleză Hardback – 15 apr 2016
This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs).  Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.
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Specificații

ISBN-13: 9783319316512
ISBN-10: 3319316516
Pagini: 224
Ilustrații: IX, 213 p. 147 illus., 122 illus. in color.
Dimensiuni: 160 x 241 x 18 mm
Greutate: 0.51 kg
Ediția:1st ed. 2016
Editura: Springer
Locul publicării:Cham, Switzerland

Cuprins

SteepSlope Devices and TFETs.- Tunnel-FETFabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for DigitalApplications.- Atomistic Simulations of Tunneling FETs.- Quantum TransportSimulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: StructureOptimization with Numerical Simulation.

Textul de pe ultima copertă

This book provides a single-source reference tothe state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, theTFETs fabrication process and the important roles that TFETs will play inenabling integrated circuit designs for power efficiency. 
·        Provides comprehensive reference to tunneling field effecttransistors (TFETs);
·        Covers all aspects of TFETs, from device process to modeling andapplications; ·        Enables design of power-efficient integrated circuits, with lowpower consumption TFETs.