Thin Film and Depth Profile Analysis: Topics in Current Physics, cartea 37
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Specificații
ISBN-13: 9783642465017
ISBN-10: 3642465013
Pagini: 224
Ilustrații: XII, 208 p.
Dimensiuni: 170 x 244 x 12 mm
Greutate: 0.36 kg
Ediția:Softcover reprint of the original 1st ed. 1984
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Topics in Current Physics
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3642465013
Pagini: 224
Ilustrații: XII, 208 p.
Dimensiuni: 170 x 244 x 12 mm
Greutate: 0.36 kg
Ediția:Softcover reprint of the original 1st ed. 1984
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Topics in Current Physics
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
1. Introduction..- 1.1 Requirements for Thin Film and In-Depth Analysis.- 1.2 Object and Outline of the Book.- References.- 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis..- 2.1 Methods to Determine Chemical Structures in Material Research.- 2.2 Selected Analytical Features Used to Determine Chemical Structures.- 2.3 Determining Physical Structures in Material Research.- 2.4 Application of Different Microanalytical Techniques to Specific Analytical Problems.- 2.5 Future Prospects.- References.- 3. Depth Profile and Interface Analysis of Thin Films by AES and XPS.- 3.1 Quantification from First Principles.- 3.2 Initial Transient Layer.- 3.3 Steady-State Region.- 3.4 Film-Substrate Interface.- References.- 4. Secondary Neutral Mass Spectrometry (SNMS) and Its Application to Depth Profile and Interface Analysis..- 4.1 Background.- 4.2 Experimental Method.- 4.3 Quantification of SNMS.- 4.4 Applications of SNMS to Depth Profile Analysis.- 4.5 Concluding Remarks.- References.- 5. In-Situ Laser Measurements of Sputter Rates During SIMS/AES In-Depth Profiling..- 5.1 Background.- 5.2 Principles of Laser Technique.- 5.3 Experiments.- 5.4 Results and Discussion.- 5.5 Conclusion.- References.- 6. Physical Limitations to Sputter Profiling at Interfaces — Model Experiments with Ge/Si Using KARMA..- 6.1 Background.- 6.2 Experimental Approach.- 6.3 Conversion of Raw Sputter Profiles into Depth Profiles.- 6.4 Depth Profiles of the Ge/Si Interface.- 6.5 Dose Effects and Preferential Sputtering.- 6.6 Depth Resolution in Sputter Profiling.- 6.7 Summary and Outlook.- References.- 7. Depth Resolution and Quantitative Evaluation of AES Sputtering Profiles.- 7.1 Background.- 7.2 Calibration of the Depth Scale.- 7.3 Calibration of theConcentration Scale.- 7.4 Depth Resolution in Sputter Profiling.- 7.5 Determination of the Resolution function.- 7.6 Deconvolution Procedures.- 7.7 Conclusion.- References.- 8. The Theory of Recoil Mixing in Solids.- 8.1 Background.- 8.2 Review of Recoil Mixing Models.- 8.3 General Formulation of Atomic Relocation Phenomena.- 8.4 Solutions to the Specific Mixing Models.- 8.5 Summary and Outlook.- 8.6 List of Symbols.- References.- Additional References with Titles.