Semiconductor Memory Devices and Circuits
Autor Shimeng Yuen Limba Engleză Paperback – 13 apr 2025
- Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor
- Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array
- Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array
- Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET
- Explores the new applications such as in-memory computing for AI hardware acceleration.
| Toate formatele și edițiile | Preț | Express |
|---|---|---|
| Paperback (1) | 329.68 lei 3-5 săpt. | +0.00 lei 7-13 zile |
| CRC Press – 13 apr 2025 | 329.68 lei 3-5 săpt. | +0.00 lei 7-13 zile |
| Hardback (1) | 839.95 lei 6-8 săpt. | +0.00 lei 7-13 zile |
| CRC Press – 15 apr 2022 | 839.95 lei 6-8 săpt. | +0.00 lei 7-13 zile |
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Specificații
ISBN-13: 9780367687151
ISBN-10: 0367687151
Pagini: 214
Ilustrații: 370
Dimensiuni: 156 x 234 x 20 mm
Greutate: 0.4 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
ISBN-10: 0367687151
Pagini: 214
Ilustrații: 370
Dimensiuni: 156 x 234 x 20 mm
Greutate: 0.4 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Cuprins
1. Semiconductor Memory Devices and Circuits. 2. SRAM. 3. DRAM. 4. FLASH Memory. 5. Emerging Non-volatile Memories
Notă biografică
Shimeng Yu is currently an associate professor of electrical and computer engineering at the Georgia Institute of Technology.
Descriere
This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry trends and cutting-edge technologies.