Progress in Nano-Electro Optics IV: Springer Series in Optical Sciences, cartea 109
Editat de Motoichi Ohtsuen Limba Engleză Paperback – 19 oct 2010
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| Paperback (1) | 901.88 lei 6-8 săpt. | |
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| Springer Berlin, Heidelberg – 11 feb 2005 | 910.28 lei 6-8 săpt. |
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Specificații
ISBN-13: 9783642062261
ISBN-10: 3642062261
Pagini: 224
Ilustrații: XIV, 208 p.
Dimensiuni: 155 x 235 x 13 mm
Greutate: 0.35 kg
Ediția:Softcover reprint of hardcover 1st edition 2005
Editura: Springer
Colecția Springer Series in Optical Sciences
Seria Springer Series in Optical Sciences
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3642062261
Pagini: 224
Ilustrații: XIV, 208 p.
Dimensiuni: 155 x 235 x 13 mm
Greutate: 0.35 kg
Ediția:Softcover reprint of hardcover 1st edition 2005
Editura: Springer
Colecția Springer Series in Optical Sciences
Seria Springer Series in Optical Sciences
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
Near-Field Imaging of Magnetic Domains.- Improvement of Interface Quality in Cleaved-Edge-Overgrowth GaAs Quantum Wires Based on Micro-optical Characterization.- Recombination Dynamics in InxGa1™xN-Based Nanostructures.- Quantum Theory of Radiation in Optical Near Field Based on Quantization of Evanescent Electromagnetic Waves Using Detector Mode.
Notă biografică
Dr. M. Ohtsu is currently a professor of The University of Tokyo. He is also a project leader of SORST Nanophotonics Team, Japan Science and TechnologyAgency. He has been a president of IEEE LEOS Japan Chapter. He has also been a member of the board of directors, Japan Society of Applied Physics. He is a fellow of Optical Society of America.
Textul de pe ultima copertă
This volume focuses on the characterization of nano-optical materials and optical-near field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics.
Caracteristici
Up-to-date state-of-the-art report focusing on new theoretical developments and applications of nanowires, Includes supplementary material: sn.pub/extras