Cantitate/Preț
Produs
Total produse
Vezi coșul
Multi-run Memory Tests for Pattern Sensitive Faults de Ireneusz Mrozek

Multi-run Memory Tests for Pattern Sensitive Faults

Autor Ireneusz Mrozek
en Limba Engleză Paperback – feb 2019
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
  • Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  • Presents practical algorithms for design and implementation of efficient multi-run tests;
  • Demonstrates methods verified by analytical and experimental investigations.
Citește tot Restrânge

Preț: 36529 lei

Puncte Express: 548
Paperback 36529 lei
Hardback 37215 lei

Carte tipărită la comandă

Livrare economică 19 mai-02 iunie

 Adaugă în coș

Wish list
Gift list
Am citit!
Adaugă în listă

Specificații

ISBN-13: 9783030081980
ISBN-10: 3030081982
Pagini: 135
Ilustrații: X, 135 p. 34 illus.
Dimensiuni: 155 x 235 mm
Greutate: 0.22 kg
Ediția:Softcover reprint of the original 1st ed. 2019
Editura: Springer International Publishing
Colecția Springer
Locul publicării:Cham, Switzerland

Cuprins

Introduction to digital memory.- Basics of functional RAM testing.- Multi-cell faults.- Controlled random testing.- Multi-run tests based on background changing.- Multi-run tests based on address changing.- Multiple controlled random testing.- Pseudo exhaustive testing based on march tests.- Conclusion.

Notă biografică

Ireneusz Mrozek received his M.Sc. and Ph.D. degrees in computer science in 1994 and 2004,respectively. Since 1994 he has been employed at the Faculty of Computer Science of Bialystok Technical University (Poland). His main research interests include the area of diagnostic testing of embedded memories. Particularly, he focuses on transparent tests for RAM as well as the application of these in the BIST or BISR schemes. He has also gained industrial experience working as a Senior Software Engineer at Motorola Solutions.

Textul de pe ultima copertă

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
  • Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  • Presents practical algorithms for design and implementation of efficient multi-run tests;
  • Demonstrates methods verified by analytical and experimental investigations.