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Fully Depleted Silicon-On-Insulator: Nanodevices, Mechanisms and Characterization de Sorin Cristoloveanu

Fully Depleted Silicon-On-Insulator: Nanodevices, Mechanisms and Characterization

Autor Sorin Cristoloveanu
en Limba Engleză Paperback – 6 aug 2021

Ne-a atras atenția această lucrare fundamentală care abordează direct provocarea optimizării circuitelor CMOS avansate, într-un moment în care tehnologia Fully Depleted Silicon-On-Insulator (FD-SOI) devine esențială pentru viitorul Internet of Things (IoT). Proiectul editorial semnat de Sorin Cristoloveanu oferă inginerilor și cercetătorilor instrumentele necesare pentru a înțelege nu doar fizica dispozitivelor, ci și mecanismele pragmatice de implementare a nanodispozitivelor pe substrat izolator. Dacă Silicon-On-Insulator (SOI) Technology de O. Kononchuk v-a oferit cadrul teoretic general al materialelor SOI, volumul de față restrânge focusul și oferă instrumentele practice specifice variantei „fully depleted”, explorând exhaustiv metodele de caracterizare electrică și structurile inovatoare.

Notăm cu interes organizarea riguroasă a materialului. Cartea progresează logic de la bazele tehnologice către mecanisme complexe precum efectele de cuplaj și scalare, culminând cu o secțiune dedicată dispozitivelor emergente. Această abordare amintește de stilul analitic din Electrical Characterization of Silicon-On-Insulator Materials and Devices, însă Fully Depleted Silicon-On-Insulator rafinează conceptele pentru nodurile tehnologice actuale. Putem afirma că experiența autorului se reflectă în claritatea explicațiilor pentru tehnici precum pseudo-MOSFET sau metodele bazate pe diode, esențiale în faza de R&D. Ilustrațiile color numeroase nu sunt doar estetice, ci servesc ca suport vizual critic pentru diagramele de benzi și curbele de caracterizare care definesc performanța acestor tranzistori de ultimă generație.

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Specificații

ISBN-13: 9780128196434
ISBN-10: 0128196432
Pagini: 384
Ilustrații: Approx. 150 illustrations (150 in full color)
Dimensiuni: 152 x 229 x 30 mm
Greutate: 0.51 kg
Editura: ELSEVIER SCIENCE

Public țintă

Materials Scientists and Electrical Engineers in academia,  R&D
Physicists, Graduate students, Device-Physics specialists

De ce să citești această carte

Este o resursă indispensabilă pentru inginerii electroniști și cercetătorii care lucrează la dezvoltarea circuitelor de putere ultra-scăzută. Cititorul câștigă o înțelegere profundă a avantajelor FD-SOI față de FinFET, primind acces la expertiza unui pionier al domeniului. Cartea oferă soluții concrete pentru caracterizarea electrică și designul dispozitivelor de memorie și senzori, fiind un ghid tehnic actualizat pentru era IoT.

Descriere scurtă

Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology.
There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain.
Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications.
Early praise for Fully Depleted Silicon-On-Insulator
"It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan
"FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France
"This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA
"A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA
"The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan
From the author
"It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." 


  • Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient
  • Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices
  • Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications

Cuprins

Part I Technology
1. FD-SOI technology
Part II Mechanisms in FD-SOI MOSFET
2. Coupling effects
3. Scaling effects
4. Floating-body effects
Part III Electrical characterization techniques for FD-SOI structures
5. The pseudo-MOSFET
6. Diode-based characterization methods
7. Characterization methods for FD-SOI MOSFET
Part IV Innovative FD-SOI devices
8. Electrostatic doping and related devices
9. Band-modulation devices
10. Emerging devices
Annex: FD-SOI teasers

Recenzii

Early praise for Fully Depleted Silicon-On-Insulator
"It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." – Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan
"FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." – Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France
"This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." – Professor Alexander Zaslavsky, Brown University, USA
"A superbly written book on SOI technology by a master in the field." – Professor Yuan Taur, University of California, San Diego, USA
"The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." – Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan
From the author
"It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book."