Emerging Ferroelectric Materials and Devices: Semiconductors and Semimetals, cartea 114
John Heron, Zetian Mien Limba Engleză Hardback – 22 noi 2023
- 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate
- The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this
- Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
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Specificații
ISBN-13: 9780443193903
ISBN-10: 0443193908
Pagini: 186
Dimensiuni: 152 x 229 mm
Greutate: 0.45 kg
Editura: ELSEVIER SCIENCE
Seria Semiconductors and Semimetals
ISBN-10: 0443193908
Pagini: 186
Dimensiuni: 152 x 229 mm
Greutate: 0.45 kg
Editura: ELSEVIER SCIENCE
Seria Semiconductors and Semimetals
Cuprins
1. ScAlN Epitaxy: Transistors Through High ScN Fraction Thin Films
Matthew Hardy
2. To be determined
Asif Khan
3. To be determined
John Heron
4. Polarity and Ferroelectricity in Wurtzite-Type Materials
Simon Fichtner
5. In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators
Oliver Ambacher and Mohamed Yassine
6. 2D ferroelectrics and device applications
Cheng Gong
7. Toward New Ferroelectric Nitride Materials and Devices: Aluminum Boron Nitride and Aluminum Scandium Nitride Ferroelectric High Electron Mobility Transistors (Ferro HEMTs)
Joseph Casamento and Huili Grace Xing
8. Recent advances of epitaxial ferroelectric nitrides
Zetian Mi
Matthew Hardy
2. To be determined
Asif Khan
3. To be determined
John Heron
4. Polarity and Ferroelectricity in Wurtzite-Type Materials
Simon Fichtner
5. In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators
Oliver Ambacher and Mohamed Yassine
6. 2D ferroelectrics and device applications
Cheng Gong
7. Toward New Ferroelectric Nitride Materials and Devices: Aluminum Boron Nitride and Aluminum Scandium Nitride Ferroelectric High Electron Mobility Transistors (Ferro HEMTs)
Joseph Casamento and Huili Grace Xing
8. Recent advances of epitaxial ferroelectric nitrides
Zetian Mi