Nanoscaled Semiconductor-On-Insulator Structures and Devices
Editat de S. Hall, A N Nazarov, V S Lysenkoen Limba Engleză Hardback – 9 iul 2007
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Specificații
ISBN-13: 9781402063787
ISBN-10: 1402063784
Pagini: 369
Ilustrații: XIII, 369 p.
Dimensiuni: 167 x 245 x 30 mm
Greutate: 0.69 kg
Ediția:2nd edition
Editura: Springer
Locul publicării:Dordrecht, Netherlands
ISBN-10: 1402063784
Pagini: 369
Ilustrații: XIII, 369 p.
Dimensiuni: 167 x 245 x 30 mm
Greutate: 0.69 kg
Ediția:2nd edition
Editura: Springer
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
Nanoscaled SOI Material and Device Technologies.- Status and trends in SOI nanodevices.- Non-Planar Devices for Nanoscale CMOS.- High-? Dielectric Stacks for Nanoscaled SOI Devices.- Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer.- Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates.- Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs.- Physics of Novel Nanoscaled SemOI Devices.- Integration of silicon Single-Electron Transistors Operating at Room Temperature.- SiGe Nanodots in Electro-Optical SOI Devices.- Nanowire Quantum Effects in Trigate SOI MOSFETs.- Semiconductor Nanostructures and Devices.- MuGFET CMOS Process with Midgap Gate Material.- Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs.- SiGeC HBTs: impact of C on Device Performance.- Reliability and Characterization of Nanoscaled SOI Devices.- Noise Research of Nanoscaled SOI Devices.- Electrical Characterization and Special Properties of FINFET Structures.- Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs.- Investigation of Compressive Strain Effects Induced by STI and ESL.- Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology.- Theory and Modeling of Nanoscaled Devices.- Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems.- Electron Transport in Silicon-on-Insulator Nanodevices.- All Quantum Simulation of Ultrathin SOI MOSFETs.- Resonant Tunneling Devices on SOI Basis.- Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions.- Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL andSubthreshold Swing of Cylindrical Gate all Around Mosfets.
Caracteristici
Reviews by leading experts in SOI nanoscaled electronics Analysis of prospects of SOI nanoelectronics beyond Moore’s law Explanation of fundamental limits for CMOS, SOICMOS and single electron technologies Combined views on SOI nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation