Cantitate/Preț
Produs

Materials and Physics for Nonvolatile Memories

Editat de Yoshihisa Fujisaki, Rainer Waser, Tingkai Li
en Limba Engleză Paperback – 23 iul 2012
This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.
Citește tot Restrânge

Preț: 24133 lei

Puncte Express: 362

Carte tipărită la comandă

Livrare economică 25 septembrie-09 octombrie

Livrare prin curier în România Termenul estimat este afișat lângă disponibilitate.
Transport gratuit de la 40000 lei Plată online sau ramburs, în funcție de opțiunile comenzii.
Retur gratuit în 14 zile Comandă securizată și suport în română.

Specificații

ISBN-13: 9781107408296
ISBN-10: 1107408296
Pagini: 216
Dimensiuni: 152 x 229 x 12 mm
Greutate: 0.32 kg
Editura: Cambridge University Press
Locul publicării:New York, United States

Cuprins

Part I. Advanced Flash I; Part II. Charge Trap Memory I; Part III. Magnetic Resistive RAM; Part IV. Poster Session: Advanced Flash II; Part V. Poster Session: Charge Trap II and MRAM; Part VI. Ferroelectric Memory; Part VII. Resistive Switching RAM I; Part VIII. Resistive Switching RAM II; Part IX. Poster Session: Resistive Switching RAM III; Part X. Poster Session: Phase Change RAM I; Part XI. Phase Change RAM II; Part XII. Phase Change RAM III; Author index; Subject index.

Descriere

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.