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III-Nitride Semiconductors: Optical Properties de Hongxing Jiang

III-Nitride Semiconductors: Optical Properties

Autor Hongxing Jiang
en Limba Engleză Hardback – 26 iul 2002
This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.
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Specificații

ISBN-13: 9781560329732
ISBN-10: 1560329734
Pagini: 422
Dimensiuni: 152 x 229 x 29 mm
Greutate: 0.69 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press

Public țintă

Academic, Postgraduate, and Undergraduate

Cuprins

Chapter One: Optical Spectroscopy of Highly Excited Group III-Nitrides
Chapter Two: Optical Constraints of III-Nitrides-Experiments
Chapter Three: Optical Functions of III-Nitrides-Calculations
Chapter Four: Interband Optical Transitions in Piezo-Strained InGaN Qunatum Wells
Chapter Five: Electric Fields in Polarized InGaN/GaN Heterostructures
Chapter Six: Inter-link Between Structural and Optical Properties of GaN and GaN/AIGaN Heterostructures
Chapter Seven: LO Phonon Assisted Excition Luminescence Processes in Heteroepitaxial GaN Films
Chapter Eight: Cubic Phase GaN and AIGaN: Expitaxial Growth and Optical Properties

Notă biografică

Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.
Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor of the Optoelectronic Properties of Semiconductors and Superlattices series.

Descriere

This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.
Part II consists of chapters with emphasis on the optical spectroscopy of highly excited group III-nitrides, theoretical calculations and experimental measurements of optical constants of III-nitrides. The remaining five chapters focus on the relationships and properties of GaN and InGaN as relating to III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds for newcomers to the field and will be a stimulus to further advances for experienced researchers. The chapters contained in this volume constitutes a representative sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Recenzii

""This essential book...is the first to present a systematic, comprehensive overview of the optical properties of III-nitride semiconductors..."
"The style of writing is engagin, which makes the book easily accessible to anyone involved in the development of optoelectronic devices, optical spectroscopy or new materials research."
-Mircea Dragoman, National Research Institute in Microtechnology, Bucharest, Romania.."
Book Reviews
–Optics & Photonics News, June 2004