Diffusion in Materials
Editat de A L Laskar, J L Bocquet, G. Brébec, C. Montyen Limba Engleză Hardback – 31 mar 1990
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Specificații
ISBN-13: 9780792306535
ISBN-10: 0792306538
Pagini: 688
Ilustrații: XVIII, 688 p.
Dimensiuni: 160 x 241 x 43 mm
Greutate: 1.22 kg
Ediția:1990 edition
Editura: Springer
Locul publicării:Dordrecht, Netherlands
ISBN-10: 0792306538
Pagini: 688
Ilustrații: XVIII, 688 p.
Dimensiuni: 160 x 241 x 43 mm
Greutate: 1.22 kg
Ediția:1990 edition
Editura: Springer
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
Introductory lecture.- I — Diffusion Theory.- Thermally activated processes in solids.- Atomic theory of diffusion-linear response theory.- Diffusion in alloys.- Non linear phenomena in solid state diffusion.- Diffusion in heterogeneous materials.- II — Point Defect Parameters Diffusion Coefficients.- Evaluation of diffusion coefficients.- Calculation of point defect parameters in ionic materials.- Monte Carlo simulation of diffusion in solids: Some recent developments.- Experimental techniques for the measurement of diffusion coefficients.- Diffusion and soft phonons in bcc metals.- Vacancy-mediated interstitial-substitutional diffusion in semiconducting and metallic matrices.- III — Diffusion in Short Circuits and Under Irradiation.- Surface diffusion on metals (abstract).- Dislocation and grain boundary diffusion.- Interdiffusion in thin films (abstract).- Diffusion and precipitation under irradiation.- IV — Diffusion in Ceramics (Oxides, Carbides, Nitrides).- Defects and diffusion in oxides.- Diffusion in high-Tc superconductors.- Analysis of oxygen diffusion in superconducting YBa2Cu307–? ceramic oxides.- Diffusion in carbides and nitrides.- V — Diffusion in Ionic Solids.- Diffusion in ionic solids.- Surface and dislocation effects on diffusion in ionic crystals.- The ionic hall effect in crystals.- Diffusion in fast -ion conductors.- Diffusion in geomaterials (abstract).- VI — Diffusion in Semiconductors.- Atomic diffusion in homopolar semiconductors (abstract).- Diffusion of dopants in silicon.- Diffusion in compound semiconductors.- Experimental studies of hydrogen motion in hydrogenated amorphous silicon and germanium.- VII — Diffusion in Non Crystalline Materials.- Diffusion in conducting polymers.- Diffusion in amorphous materials.-Amorphization by solid state reaction.- APPENDIX Posters-abstracts.- Related to Chapter I.- S. Malik A. V. Chadwick Oxidation in a temperature gradient.- S. A. Akbar Atomistic treatment of demixing in multicomponent oxides.- S. A. Akbar The path probability method: An atomistic technique in diffusion.- Related to Chapter II.- C. Lexcellent G. Some J. Bernardini S. Benlemlih Is a correlation between the high temperature behaviour of highly concentrated solid solutions in stationary creep and in diffusion possible?.- P. W. M. Jacobs M. L. Vernon Defect energies for magnesium oxide and lithium oxide.- S.-Q. Shi D. A. Thompson W. W. Smeltzer M. P. Riehm Deuterium permeation behavior in polycristalline nickel implanted with nickel and helium ions.- C. Maunier and V. Pontikis Intergranular superionic conductivity in bicrystals of the fluorite structure.- A. Menai, M. Kherraz, J. Bernardini and Moya Determination of diffusion coefficients in presence of precipitation of the diffusing atoms in alloys.- J. Fischer and P. Jung Diffusion inferritic FeAlNiNb studied by NiAl-precipitate coarsening.- J. Grammatikakis, K. Eftaxias, V. Hadjicontis and V. Katsika Interconnection of the diffusion coefficients of various elements in aluminium.- T.D. Andreadis and M. Rosen Defect concentration dependent migration energies and defect diffusion in irradiated AgZn alloys.- Related to Chapter III.- A.M. Brass, A. Chanfreau and J. Chene Are grain boundaries short-diffusion paths for hydrogen diffusion in high purity nickel?.- I.A. Szabo, D.L. Beke and F.J. Kedves On the transition between the C-and B-kinetic regimes for grain-boundary diffusion.- R. Scholz Blank profiles in tracer diffusion under irradiation.- Related to Chapter IV.- D. Prot, M. Miloche and C. Monty Oxygen self-diffusion in aluminium oxide single crystals.- U. Littmark and H.C. Paulini Carbide formation during post annealing of a-c:D coated molybdenum.- Related to Chapter V.- S.K. Wonnell and L.M. Slifkin Measurement of the ionic space charge potential and defect formation parameters in AgBr.- T.S. Bush, A.V. Chadwick, M. Cole and C.R.A. Catlow Ionic conductivity and local structure of lanthanide ??-alumina.- S.R. Elliott Non-debye relaxation in ionically-conducting glasses.- W. Soppe Ionic conductivity of borate glasses.- K. Stanley, B. Finkernagel and A. Laskar Selenium ion diffusion in silver halides.- Related to Chapter VI.- C.A. Londos Diffusivities and solubilities of various elements in silicon.- S. Mitra and J. Shinar Long range atomic H motion in p-doped rf-sputter deposited a-Si:H.- M. Backhaus-Ricoult Role of diffusion in solid state reactions between SiC and (Fe, Ni) alloys.- L.H. Allen, D. Theodore and J.W. Mayer Si crystal growth in the Au and poly Si system during thermal anneal.- I. Delidais, P. Maugis, D. Ballutaud and J.L. Maurice Hydrogenation and oxidation of p-type silicon.- A. Chari, P. De Mierry, D. Ballutaud and M. Aucouturier Introduction and diffusion of hydrogen in silicon.- Related to Chapter VII.- E. Gaffet, N. Merk and G. Martin Crystal to amorphous phase transition induced by ball milling in Ni-Zr alloys.- J.C. Mesquita and L.M. Abrantes Polypyrrole — counter ions motion and the diffusion model.- D. Jacobs and H. Nakanishi Correlation functions and the diffusion coefficient for random hopping models.- J.C. Dyre AC properties of disordered ionic conductors.- V. Dupuis, M.F. Ravet, C. Tete and M. Piecuch Stability of multilayers for X-ray optics under pulsed laser heating.