Frontiers in Nanoscale Science of Micron/Submicron Devices: NATO Science Series E:, cartea 328
Editat de A.-P. Jauho, Eugenia V. Buzanevaen Limba Engleză Hardback – 31 oct 1996
| Toate formatele și edițiile | Preț | Express |
|---|---|---|
| Paperback (1) | 1757.53 lei 43-57 zile | |
| SPRINGER NETHERLANDS – 20 sep 2011 | 1757.53 lei 43-57 zile | |
| Hardback (1) | 1763.57 lei 43-57 zile | |
| SPRINGER NETHERLANDS – 31 oct 1996 | 1763.57 lei 43-57 zile |
Din seria NATO Science Series E:
- 24%
Preț: 1712.87 lei - 15%
Preț: 566.67 lei - 15%
Preț: 572.94 lei - 15%
Preț: 571.73 lei - 15%
Preț: 578.92 lei - 15%
Preț: 580.45 lei - 15%
Preț: 568.69 lei - 15%
Preț: 578.42 lei - 15%
Preț: 583.95 lei -
Preț: 382.65 lei -
Preț: 372.15 lei - 20%
Preț: 333.06 lei -
Preț: 408.17 lei - 18%
Preț: 1176.56 lei - 18%
Preț: 1764.96 lei - 18%
Preț: 1181.44 lei -
Preț: 366.56 lei -
Preț: 393.75 lei - 18%
Preț: 1769.50 lei - 5%
Preț: 353.34 lei -
Preț: 391.71 lei - 18%
Preț: 1766.62 lei -
Preț: 404.30 lei -
Preț: 384.13 lei -
Preț: 383.59 lei - 18%
Preț: 2907.74 lei -
Preț: 374.14 lei - 5%
Preț: 376.18 lei - 18%
Preț: 1180.81 lei - 18%
Preț: 1181.87 lei - 18%
Preț: 1186.41 lei - 5%
Preț: 3393.87 lei - 18%
Preț: 1768.29 lei - 5%
Preț: 364.41 lei - 18%
Preț: 1180.06 lei -
Preț: 377.84 lei -
Preț: 380.62 lei - 18%
Preț: 2392.01 lei - 5%
Preț: 1373.66 lei -
Preț: 380.99 lei
Preț: 1763.57 lei
Preț vechi: 2150.69 lei
-18% Nou
Puncte Express: 2645
Preț estimativ în valută:
312.03€ • 363.51$ • 272.48£
312.03€ • 363.51$ • 272.48£
Carte tipărită la comandă
Livrare economică 19 ianuarie-02 februarie 26
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9780792343011
ISBN-10: 0792343018
Pagini: 554
Ilustrații: XVI, 554 p.
Dimensiuni: 155 x 235 x 32 mm
Greutate: 0.98 kg
Ediția:1996
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series E:
Locul publicării:Dordrecht, Netherlands
ISBN-10: 0792343018
Pagini: 554
Ilustrații: XVI, 554 p.
Dimensiuni: 155 x 235 x 32 mm
Greutate: 0.98 kg
Ediția:1996
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series E:
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
I. Nanotechnologies.- Submicron Technology.- Ultra Fine Particles and Coatings.- 3-D Patterned III-V Semicondutor Devices Using High Energy In-Situ Focused Ion Beam Lithography and MBE.- Real Time 3-D Patterned Crystal Growth of GaAs Using a Low Energy Focused Ion Beam and Molecular Beam Epitaxy.- Mesoscopic Structure-Formation and Quantum Properties of Heteroepitaxy of InAs/GaAs.- Van der Waals Epitaxy of Transition Metal Dichalcogenides Using Metal Organic Precursors (MOVDWE).- Thin Film Epitaxial Growth by Laser Ablation.- Nanostructuring of Silicon by Laser Direct Writing.- Si(001) Surface Passivation caused by Bi Adsorption.- II. Characterization.- Applications of Scanning Force Microscopy.- An Elliptically Polarized Synchrotron Radiation Beam Line and Its Applications.- The Potential of Electron Spectroscopy and Scanning Tunnelling Microscopy for the Study of Semiconducting Nanostructures.- Optical Characterization of Surfaces at IR and VIS Energies.- Optical Techniques for Probing Semiconductor Surfaces and Interfaces.- Nanoscale Characterization of Interfaces in Micron/Submicron Structures.- III. Fundamental Properties of Micro/Nanostructures.- Electron Interference at III-V Heterointerfaces: Physics and Devices.- Non-Equilibrium Mesoscopic Physics: Microwave-Induced Coherent Transport in Two-Dimensional Semiconductor Microstructures.- Influence of Fluctuations of Widths of Single Quantum Wells on Photoluminescence Properties in Metallo-Organic Compounds of Hydride Epitaxial GaAs / ALxGa1-xAs Heterostructures.- Accurate Modeling of Double Barrier Resonant Tunneling Diodes.- Mechanisms of the Tunnel Current Formation in Double Barrier Resonant Tunneling Structures.- Quantum Well Structures Based on the Layered Compounds InSe and GaSe Grown by Van der Waals Epitaxy.- Frequency Properties of Planer Microwave Detector.- Noise in Silicon Structures with Bicrystallites.- Fundamental Properties and Nanoscale Aspects of Schottky Barriers.- Size Effects in Properties of Metal-Semiconductor Structures with Schottky Barriers.- New Terminations for Planar Schottky Structure (PSS).- Metal (Cr, Mo, W)-GaAs Contacts.- Dislocation Displacement in Silicon Structures.- Effect of Substrate Defects in the Luminescent Properties of Porous Silicon Layers.- On the Kinematics of Amorphization under Ion Implantation.- IV. Basic Physics of Novel Nanostructures.- Lateral Superlattices: Classical, Semi-Classical, and Quantum Mechanical Transport Phenomena.- Transport Studies in Semiconductor Heterostructures.- Equilibrium and Nonequilibrium Optical Effects in Semiconductor Heterostructures.- Observation of Scaling Behavior in a Coulomb Blockade System.- Dynamic Quantum Wells and Quantum Dots in MIS-Microstructure with Periodic Field Electrodes.- Disordered Superlattices.- Si/Ge Superlattices: A Step Towards Si-Based Optoelectronics.- Low Frequency Admittance of Quantized Hall Conductors.- Screening in Two-Dimensional Electron Liquid.- Dielectric Function of Matrix Disperse Systems with Nanoscale Conducting Inclusions Exhibiting Quantum Size Properties.- Photograph.- List of Participants.