Electrothermal Analysis of VLSI Systems
Autor Yi-Kan Cheng, Ching-Han Tsai, Chin-Chi Teng, Sung-Mo (Steve) Kangen Limba Engleză Hardback – 30 iun 2000
Part I, The Building Blocks, discusses electrothermal phenomena and the fundamental building blocks that electrothermal simulation requires (including power analysis, temperature-dependent device modeling, thermal/electrothermal simulation, and experimental setup-calibration).
Part II, The Applications, discusses three important applications of VLSI electrothermal analysis including temperature-dependent electromigration diagnosis, cell-level thermal placement and temperature-driven power and timing analysis.
Electrothermal Analysis of VLSI Systems will be useful for researchers in the fields of IC reliability analysis and physical design, as well as VLSI designers and graduate students.
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Specificații
ISBN-13: 9780792378617
ISBN-10: 079237861X
Pagini: 210
Ilustrații: XXIII, 210 p. 36 illus.
Dimensiuni: 155 x 235 x 14 mm
Greutate: 0.51 kg
Ediția:2002
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 079237861X
Pagini: 210
Ilustrații: XXIII, 210 p. 36 illus.
Dimensiuni: 155 x 235 x 14 mm
Greutate: 0.51 kg
Ediția:2002
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
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Public țintă
ResearchCuprins
The Building Blocks.- Power Analysis for CMOS Circuits.- Temperature-dependent MOS Device Modeling.- Thermal Simulation for VLSI Systems.- Fast-timing Electrothermal Simulation.- The Applications.- Temperature-dependent Electromigration Reliability.- Temperature-driven Cell Placement.- Temperature-driven Power and Timing Analysis.
Recenzii
From the Foreword:
`Continuing increases in the levels of circuit integration and concomitant increases in performance are sustaining the trend of increasing power dissipation in VLSI systems. A consequence is that the impact of temperature on the successful operation and reliability of devices must be comprehended during the design process.....This text provides a comprehensive formulation of the electrothermal analysis problem beginning with a summary of the sources of power dissipation in CMOS circuits and followed by a formulation of the effect of temperature on MOS devices.'
Dr. Ralph K. Cavin, Vice President, Semiconductor Research Corporation
`Continuing increases in the levels of circuit integration and concomitant increases in performance are sustaining the trend of increasing power dissipation in VLSI systems. A consequence is that the impact of temperature on the successful operation and reliability of devices must be comprehended during the design process.....This text provides a comprehensive formulation of the electrothermal analysis problem beginning with a summary of the sources of power dissipation in CMOS circuits and followed by a formulation of the effect of temperature on MOS devices.'
Dr. Ralph K. Cavin, Vice President, Semiconductor Research Corporation