Compact Models for Integrated Circuit Design
Autor Samar K. Sahaen Limba Engleză Paperback – 26 iul 2017
Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text:
- Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models
- Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models
- Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis
- Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices
- Includes exercise problems at the end of each chapter and extensive references at the end of the book
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Specificații
ISBN-13: 9781138827400
ISBN-10: 1138827401
Dimensiuni: 234 x 158 x 37 mm
Greutate: 0.82 kg
Editura: Taylor & Francis Ltd.
ISBN-10: 1138827401
Dimensiuni: 234 x 158 x 37 mm
Greutate: 0.82 kg
Editura: Taylor & Francis Ltd.